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Design of Low Pass Filter using Integrated Fractal Passive Components for GSM Application

P. Akhendra Kumar, N. Bheema Rao. Published in Circuits and Systems.

Communications on Applied Electronics
Year of Publication: 2017
Publisher: Foundation of Computer Science (FCS), NY, USA
Authors: P. Akhendra Kumar, N. Bheema Rao
10.5120/cae2017652725

Akhendra P Kumar and Bheema N Rao. Design of Low Pass Filter using Integrated Fractal Passive Components for GSM Application. Communications on Applied Electronics 7(10):1-3, December 2017. BibTeX

@article{10.5120/cae2017652725,
	author = {P. Akhendra Kumar and N. Bheema Rao},
	title = {Design of Low Pass Filter using Integrated Fractal Passive Components for GSM Application},
	journal = {Communications on Applied Electronics},
	issue_date = {December 2017},
	volume = {7},
	number = {10},
	month = {Dec},
	year = {2017},
	issn = {2394-4714},
	pages = {1-3},
	numpages = {3},
	url = {http://www.caeaccess.org/archives/volume7/number10/782-2017652725},
	doi = {10.5120/cae2017652725},
	publisher = {Foundation of Computer Science (FCS), NY, USA},
	address = {New York, USA}
}

Abstract

In this paper, Elliptical Low pass filter working at GSM band is realized using multilayer fractal spiral inductor and fractal spiral capacitor based 0.18 μm process. Multilayer fractal inductor and fractal spiral capacitor is shown to have good Q factor values. The influence of fractal passive components on the insertion loss of low pass filter is analyzed by EM simulations. The designed 3.17nH multilayer inductor has a maximum Q of 30 @ 6 GHz and the realized LPF GSM/AMPS band has the insertion loss of 0.4dB and return loss of more than 15dB in the passband.

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Keywords

Fractal spiral capacitor, High Frequency Structural Simulator( HFSS), Low pass Filter(LPF), Inductance value(L), Multilayered fractal inductor, Quality factor(Q), Self Resonant Frequency( SRF)