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Study of FinFET based Circuit for Ultra-Low Power Operation

Manisha Guduri, Shruti Agrawal, Vikash Kumar, Aminul Islam Published in Circuit And Systems

CAE Proceedings on International Conference on Computing, Communication and Sensor Network
Year of Publication: 2016
© 2015 by CAE Journal

Manisha Guduri, Shruti Agrawal, Vikash Kumar and Aminul Islam. Article: Study of FinFET based Circuit for Ultra-Low Power Operation. CAE Proceedings on International Conference on Computing, Communication and Sensor Network CCSN 2015(1):25-28, March 2016. Published by Foundation of Computer Science, New York, USA. BibTeX

@article{key:article,
	author = {Manisha Guduri and Shruti Agrawal and Vikash Kumar and Aminul Islam},
	title = {Article: Study of FinFET based Circuit for Ultra-Low Power Operation},
	journal = {CAE Proceedings on International Conference on Computing, Communication and Sensor Network},
	year = {2016},
	volume = {CCSN 2015},
	number = {1},
	pages = {25-28},
	month = {March},
	note = {Published by Foundation of Computer Science, New York, USA}
}

Abstract

This work aims at analysing leakage power and its variability of CMOS and FinFET inverter chain at 32-nm technology node. This paper also analyses other design metrics like propagation delay, power-delay product (PDP) and energy-delay product (EDP) of CMOS based inverter and FinFET based inverter. FinFET based inverter design achieves 1. 58× (1. 32×), 10. 03×, 4. 71× 5. 11× improvement in leakage power (its variability), propagation delay, PDP and EDP respectively compared to its CMOS based inverter. In this analysis the FinFET based inverter is found to be suitable for ultra-low power applications like portable and wearable devices.

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Keywords

Leakage Power, variability; power-delay product (PDP); energy-delay product (EDP); ultralow-power design.