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The Frequency, Time Design Analysis of Noise Figure Optimization of a Wideband PHEMT Hybrid LNA with Flat Gain for WiMAX Application

Kishor G. Sawarkar, Pramod K. B., Kushal Tuckley, Kumaraswamy H. V. Published in Communications

CAE Proceedings on International Conference on Communication Technology
Year of Publication: 2016
© 2015 by CAE Journal

Kishor G Sawarkar, Pramod K.b., Kushal Tuckley and Kumaraswamy H.v.. Article: The Frequency, Time Design Analysis of Noise Figure Optimization of a Wideband PHEMT Hybrid LNA with Flat Gain for WiMAX Application. CAE Proceedings on International Conference on Communication Technology ICCT 2015(2):35-42, February 2016. Published by Foundation of Computer Science, New York, USA. BibTeX

	author = {Kishor G. Sawarkar and Pramod K.b. and Kushal Tuckley and Kumaraswamy H.v.},
	title = {Article: The Frequency, Time Design Analysis of Noise Figure Optimization of a Wideband PHEMT Hybrid LNA with Flat Gain for WiMAX Application},
	journal = {CAE Proceedings on International Conference on Communication Technology},
	year = {2016},
	volume = {ICCT 2015},
	number = {2},
	pages = {35-42},
	month = {February},
	note = {Published by Foundation of Computer Science, New York, USA}


In this paper, the Noise figure optimization circuit configuration in PHEMT Hybrid LNA design. The optimal noise ?gure is achieved by minimizing the noise contributions by utilizing of LC resonance at input and output matching networks to maintain transistor noise optimization. This article as added with not only frequency domain characteristics but also significant time response discussed. Design includes 2 stage cascaded common source PHEMT transistors with inter stage capacitor matching for improvement of gain. An LNA with Bandwidth 2. 3-5. 8GHz simulation in AWR Microwave office software shows forward gain of 24 dB, noise figure (NF) less than 2 dB and designed amplifier will give the best performance at 5GHz with NF of 0. 9 dB and with flat Gain of 24dB. Furthermore, by balun structure input and output time analysis has been done by injecting sinusoidal sample signals with harmonic balance source models. Design is upgraded with EM structure mapping method for accurate results.


  1. Niti Mohan, Vaithianathan. V "Noise Analysis of the Input Matching Circuits for UWB Low Noise Amplifiers" at International conference on Communication and Signal Processing, April 3-5, 2013, India , 978-1-4673-4866-9/13/$31. 00 ©2013 IEEE Pg : 545- 550
  2. SheryAsaadWahbaMarzouk, Faisal A. Hussien, A. M. Shousha "A 3dB NF 0. 1–6. 6GHzInductorlessWideBand Low Noise Amplifier in 0. 13µm CMOS"978-1-4799-4132-2/14/$31. 00 ©2014 IEEE Pg : 953- 956
  3. Ahmed H. Akgiray, Sander Weinreb, Rémy Leblanc, Michel Renvoise, Peter Frijlink, Richard Lai, and Stephen Sarkozy, "Noise Measurements of Discrete HEMT Transistors and Application to Wideband VeryLow-Noise Ampli?ers"IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 61, NO. 9, SEPTEMBER 2013Pg : 3285-3297
  4. A. P. Adsul, Dr. S. K. Bodhe, "A Low-Noise Amplifier Design for 3. 1-10. 6 GHz Impulse Radio Ultra Wideband Receivers. " 978-1-4673-5090-7/13/$31. 00 ©2013 IEEE Pg: 470-474
  5. Pramod K B, Kumaraswamy H. V, Praveen K B, "The Design and Simulation of Radio Frequency Narrow Band Low Noise Amplifier with Input, Output, Intermediate Matching" 978-1-4799-0400-6/13/$31. 00 ©2013 IEEE
  6. J. Manjula, S. Malarvizhi, "A 1GHz Current Reuse Low Noise Amplifier with Active Inductor Load" 978-1-4673-5090-7/13/$31. 00 ©2013 IEEE Pg: 211-215
  7. Fan Cai, A. ÇarUlusoy, John Papapolymerou , "2. 4 GHz Low Cost Low Noise Amplifier on Flexible Organic Substrate" 2013 Asia-Pacific Microwave Conference Proceedings , 978-1-4799-1472-2/13/$31. 00 ©2013 IEEE Pg: 270-272
  8. YANG Zong-shuai ,Niehai ,HAN Wen-tao , "A high-linearity S-band SiGe HBT low-noise amplifier design"2013 International Workshop on Microwave and Millimeter Wave Circuits and System Technology , 978-1-4673-5504-9/13/$31. 00 ©20 13 IE E EPg: 308-311
  9. IoanaGiangu , Valentin Buiculescu, "Broadband Two Stages Low Noise Amplifier for Milimeter Wave" 978-1-4673-5672-5/13/$31. 00 © 2013 IEEE Pg: 323-326
  10. FarzanehTaringou, Jens Bornemann, KeWu, "Broadband coplanar-waveguide and microstriplow-noise amplifier hybrid integrations for K-band substrate integrated waveguide applications on low-permittivity substrate"IET Microw. Antennas Propag. , 2014, Vol. 8, Iss. 2, pp. 99–103doi: 10. 1049/iet-map. 2013. 0251
  11. M. A. Bashir, M. M. Ahmed, U. Rafique, Q. D. Memon "Design of a Ku Band High Gain Low Noise Amplifier" 2013 IEEE International RF and Microwave Conference (RFM2013), December 09-11, 2013 - Penang, Malaysia 978-1-4799-2214-7/13/$31. 00 ©2013 IEEE Pg : 168-171
  12. T Kawasaki', M Kubota', K. Tsukashima', T Tokumitsu', and Y Hasegawa "A Full E-band Low Noise Amplifier Realized by Using Novel Wafer-Level Chip Size Package Technology Suitable for Reliable Flip-chip Reflow-Soldering" 978•1-4799-3869-8'14/$31. 00 ®2014 IEEE.
  13. Kishor G Sawarkar, Pramod K B Tuckley and KumaraswamyH. v. Article: Design and Analysis of Noise Figure Optimization of a wideband PHEMT Hybrid LNA with Flat gain for WiMAX Application. IJCA Proceedings on International Conference on Computer Technology ICCT 2015(7):10-16, September 2015.


Psuedomorphic High electron mobility transistor (PHEMT),Advancing in Wireless Evolution (AWR),Low Noise Amplifier (LNA) and Noise Figure (NF).