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Simulation of n-FinFET Performance Reliance on Varying Combinations of Gate Material and Oxide

Kanika Mishra, Neha Somra, Ravinder Singh Sawhney. Published in Circuits and Systems.

Communications on Applied Electronics
Year of Publication: 2015
Publisher: Foundation of Computer Science (FCS), NY, USA
Authors: Kanika Mishra, Neha Somra, Ravinder Singh Sawhney

Kanika Mishra, Neha Somra and Ravinder Singh Sawhney. Article: Simulation of n-FinFET Performance Reliance on Varying Combinations of Gate Material and Oxide. Communications on Applied Electronics 2(7):12-16, August 2015. Published by Foundation of Computer Science (FCS), NY, USA. BibTeX

	author = {Kanika Mishra and Neha Somra and Ravinder Singh Sawhney},
	title = {Article: Simulation of n-FinFET Performance Reliance on Varying Combinations of Gate Material and Oxide},
	journal = {Communications on Applied Electronics},
	year = {2015},
	volume = {2},
	number = {7},
	pages = {12-16},
	month = {August},
	note = {Published by Foundation of Computer Science (FCS), NY, USA}


In this paper an n-type double gate FinFET at a gate length of 22nm is reported. Here the device performance of FinFET under different gate materials and also under different buried oxides is construed. Firstly, the drain current under different gate materials, with different work functions and SiO2 being the buried oxide has been obtained. A transfer characteristic curve has then been obtained comparing the drain current for different gate materials at a given supply voltage of 0.5 V. Secondly, the transfer characteristic curve, comparing the drain currents obtained under different buried oxides at 0.5 V supply voltage with Aluminium being the gate has been obtained. And lastly obtained is the device performance for different combinations of gate materials and buried oxides and the results were compared. It can be inferred that, a metal gate and a high k dielectric is what gives a good performance at nanometre ranges. All the simulations have been done in Visual TCAD.


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Buried Oxide, Fin field effect transistors (FinFET), HfO2 (Hafnium Oxide), Silicon on Insulator (SOI), TCAD.