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Reseach Article

Simulation of n-FinFET Performance Reliance on Varying Combinations of Gate Material and Oxide

by Kanika Mishra, Neha Somra, Ravinder Singh Sawhney
Communications on Applied Electronics
Foundation of Computer Science (FCS), NY, USA
Volume 2 - Number 7
Year of Publication: 2015
Authors: Kanika Mishra, Neha Somra, Ravinder Singh Sawhney

Kanika Mishra, Neha Somra, Ravinder Singh Sawhney . Simulation of n-FinFET Performance Reliance on Varying Combinations of Gate Material and Oxide. Communications on Applied Electronics. 2, 7 ( August 2015), 12-16. DOI=10.5120/cae2015651798

@article{ 10.5120/cae2015651798,
author = { Kanika Mishra, Neha Somra, Ravinder Singh Sawhney },
title = { Simulation of n-FinFET Performance Reliance on Varying Combinations of Gate Material and Oxide },
journal = { Communications on Applied Electronics },
issue_date = { August 2015 },
volume = { 2 },
number = { 7 },
month = { August },
year = { 2015 },
issn = { 2394-4714 },
pages = { 12-16 },
numpages = {9},
url = { },
doi = { 10.5120/cae2015651798 },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
%0 Journal Article
%1 2023-09-04T19:40:19.078002+05:30
%A Kanika Mishra
%A Neha Somra
%A Ravinder Singh Sawhney
%T Simulation of n-FinFET Performance Reliance on Varying Combinations of Gate Material and Oxide
%J Communications on Applied Electronics
%@ 2394-4714
%V 2
%N 7
%P 12-16
%D 2015
%I Foundation of Computer Science (FCS), NY, USA

In this paper an n-type double gate FinFET at a gate length of 22nm is reported. Here the device performance of FinFET under different gate materials and also under different buried oxides is construed. Firstly, the drain current under different gate materials, with different work functions and SiO2 being the buried oxide has been obtained. A transfer characteristic curve has then been obtained comparing the drain current for different gate materials at a given supply voltage of 0.5 V. Secondly, the transfer characteristic curve, comparing the drain currents obtained under different buried oxides at 0.5 V supply voltage with Aluminium being the gate has been obtained. And lastly obtained is the device performance for different combinations of gate materials and buried oxides and the results were compared. It can be inferred that, a metal gate and a high k dielectric is what gives a good performance at nanometre ranges. All the simulations have been done in Visual TCAD.

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Index Terms

Computer Science
Information Sciences


Buried Oxide Fin field effect transistors (FinFET) HfO2 (Hafnium Oxide) Silicon on Insulator (SOI) TCAD.