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Design and Simulation of Single-electron Tunneling based Nano-electronics Circuits

M. M. Abutaleb. Published in Circuits and Systems.

Communications on Applied Electronics
Year of Publication: 2018
Publisher: Foundation of Computer Science (FCS), NY, USA
Authors: M. M. Abutaleb

M M Abutaleb. Design and Simulation of Single-electron Tunneling based Nano-electronics Circuits. Communications on Applied Electronics 7(12):20-24, January 2018. BibTeX

	author = {M. M. Abutaleb},
	title = {Design and Simulation of Single-electron Tunneling based Nano-electronics Circuits},
	journal = {Communications on Applied Electronics},
	issue_date = {January 2018},
	volume = {7},
	number = {12},
	month = {Jan},
	year = {2018},
	issn = {2394-4714},
	pages = {20-24},
	numpages = {5},
	url = {},
	doi = {10.5120/cae2018652741},
	publisher = {Foundation of Computer Science (FCS), NY, USA},
	address = {New York, USA}


Among various nanotechnology devices, single-electron tunneling devices are the most promising candidates to substitute the present CMOS devices. In this paper, a new single-electron threshold-logic circuit module is presented for realizing and implementing Nano-electronic circuits. The proposed module can be dedicated to implement all basic logic gates, such as OR, NOR, AND, NAND, XOR and XNOR gates, that can be integrated in various manners to design digital circuits. The simulation results demonstrate the accuracy and stability of proposed circuit module. Design capability and flexibility of this module are further evaluated through the synthesis of high-level circuits.


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Nanoelectronics, SET technology, Threshold logic, Circuit module.