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Reseach Article

Design and Simulation of Single-electron Tunneling based Nano-electronics Circuits

by M. M. Abutaleb
Communications on Applied Electronics
Foundation of Computer Science (FCS), NY, USA
Volume 7 - Number 12
Year of Publication: 2018
Authors: M. M. Abutaleb

M. M. Abutaleb . Design and Simulation of Single-electron Tunneling based Nano-electronics Circuits. Communications on Applied Electronics. 7, 12 ( Jan 2018), 20-24. DOI=10.5120/cae2018652741

@article{ 10.5120/cae2018652741,
author = { M. M. Abutaleb },
title = { Design and Simulation of Single-electron Tunneling based Nano-electronics Circuits },
journal = { Communications on Applied Electronics },
issue_date = { Jan 2018 },
volume = { 7 },
number = { 12 },
month = { Jan },
year = { 2018 },
issn = { 2394-4714 },
pages = { 20-24 },
numpages = {9},
url = { },
doi = { 10.5120/cae2018652741 },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
%0 Journal Article
%1 2023-09-04T20:01:55.493747+05:30
%A M. M. Abutaleb
%T Design and Simulation of Single-electron Tunneling based Nano-electronics Circuits
%J Communications on Applied Electronics
%@ 2394-4714
%V 7
%N 12
%P 20-24
%D 2018
%I Foundation of Computer Science (FCS), NY, USA

Among various nanotechnology devices, single-electron tunneling devices are the most promising candidates to substitute the present CMOS devices. In this paper, a new single-electron threshold-logic circuit module is presented for realizing and implementing Nano-electronic circuits. The proposed module can be dedicated to implement all basic logic gates, such as OR, NOR, AND, NAND, XOR and XNOR gates, that can be integrated in various manners to design digital circuits. The simulation results demonstrate the accuracy and stability of proposed circuit module. Design capability and flexibility of this module are further evaluated through the synthesis of high-level circuits.

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Index Terms

Computer Science
Information Sciences


Nanoelectronics SET technology Threshold logic Circuit module.