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FinFET Device Simulation and NAND Gate Implementation using DG FinFET

Kruti B. Modha, Bhavesh H. Soni. Published in Circuits and Systems.

Communications on Applied Electronics
Year of Publication: 2016
Publisher: Foundation of Computer Science (FCS), NY, USA
Authors: Kruti B. Modha, Bhavesh H. Soni

Kruti B Modha and Bhavesh H Soni. FinFET Device Simulation and NAND Gate Implementation using DG FinFET. Communications on Applied Electronics 5(5):33-35, July 2016. BibTeX

	author = {Kruti B. Modha and Bhavesh H. Soni},
	title = {FinFET Device Simulation and NAND Gate Implementation using DG FinFET},
	journal = {Communications on Applied Electronics},
	issue_date = {July 2016},
	volume = {5},
	number = {5},
	month = {Jul},
	year = {2016},
	issn = {2394-4714},
	pages = {33-35},
	numpages = {3},
	url = {},
	doi = {10.5120/cae2016652304},
	publisher = {Foundation of Computer Science (FCS), NY, USA},
	address = {New York, USA}


In this paper it has been clarified that FinFET is a Fin Field effect transistor. It is promising substitute of CMOS in lower technology node. In this paper by making NAND Gate utilizing DG FinFET it is demonstrated that power utilization of IDDG FinFET is lesser than SDDG FinFET. At that point made an IDDG FinFET utilizing TCAD device and checked the impact of expanding the Fin width on the present qualities.


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Fin Field Effect Transistor(FinFET), Independently Driven Double Gate (IDDG), Simultaneously Driven Double Gate (SDDG)