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FinFET Device Simulation and NAND Gate Implementation using DG FinFET

by Kruti B. Modha, Bhavesh H. Soni
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Communications on Applied Electronics
Foundation of Computer Science (FCS), NY, USA
Volume 5 - Number 5
Year of Publication: 2016
Authors: Kruti B. Modha, Bhavesh H. Soni
10.5120/cae2016652304

Kruti B. Modha, Bhavesh H. Soni . FinFET Device Simulation and NAND Gate Implementation using DG FinFET. Communications on Applied Electronics. 5, 5 ( Jul 2016), 33-35. DOI=10.5120/cae2016652304

@article{ 10.5120/cae2016652304,
author = { Kruti B. Modha, Bhavesh H. Soni },
title = { FinFET Device Simulation and NAND Gate Implementation using DG FinFET },
journal = { Communications on Applied Electronics },
issue_date = { Jul 2016 },
volume = { 5 },
number = { 5 },
month = { Jul },
year = { 2016 },
issn = { 2394-4714 },
pages = { 33-35 },
numpages = {9},
url = { https://www.caeaccess.org/archives/volume5/number5/621-2016652304/ },
doi = { 10.5120/cae2016652304 },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Journal Article
%1 2023-09-04T19:55:32.899784+05:30
%A Kruti B. Modha
%A Bhavesh H. Soni
%T FinFET Device Simulation and NAND Gate Implementation using DG FinFET
%J Communications on Applied Electronics
%@ 2394-4714
%V 5
%N 5
%P 33-35
%D 2016
%I Foundation of Computer Science (FCS), NY, USA
Abstract

In this paper it has been clarified that FinFET is a Fin Field effect transistor. It is promising substitute of CMOS in lower technology node. In this paper by making NAND Gate utilizing DG FinFET it is demonstrated that power utilization of IDDG FinFET is lesser than SDDG FinFET. At that point made an IDDG FinFET utilizing TCAD device and checked the impact of expanding the Fin width on the present qualities.

References
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  5. Ankja Dubey and Sandeep Singh Gill, “Driving Capability of SG FinFET and IG FinFET”, 2015 IEEE
  6. Marc Swinnen and Ron Duncan,“Physical verification of finFET and FDSOI devices”, May 2, 2013
  7. Ravindra Singh Kushwah and Shyam Akashe, “FinFET Based Tunable Analog Circuit:Design and Analysis at 45 nm Technology”, Hindawi Publishing CorporationChinese Journal of Engineering Volume 2013
Index Terms

Computer Science
Information Sciences

Keywords

Fin Field Effect Transistor(FinFET) Independently Driven Double Gate (IDDG) Simultaneously Driven Double Gate (SDDG)

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