|Communications on Applied Electronics|
|Foundation of Computer Science (FCS), NY, USA|
|Volume 5 - Number 5|
|Year of Publication: 2016|
|Authors: Kruti B. Modha, Bhavesh H. Soni|
Kruti B. Modha, Bhavesh H. Soni . FinFET Device Simulation and NAND Gate Implementation using DG FinFET. Communications on Applied Electronics. 5, 5 ( Jul 2016), 33-35. DOI=10.5120/cae2016652304
In this paper it has been clarified that FinFET is a Fin Field effect transistor. It is promising substitute of CMOS in lower technology node. In this paper by making NAND Gate utilizing DG FinFET it is demonstrated that power utilization of IDDG FinFET is lesser than SDDG FinFET. At that point made an IDDG FinFET utilizing TCAD device and checked the impact of expanding the Fin width on the present qualities.